Semiconductor device with opposite conductivity-type impurity regions between source and trench gate for reducing leakage
US10068972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2016 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | May 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device is provided with a semiconductor substrate and a trench gate. The semiconductor substrate is provided with a drift region of a first conductive type, wherein the drift region is in contact with the trench gate; a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate; a source region of the first conductive type, wherein the source region is disposed above the body region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate; and a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.