Chemically amplified resist material, pattern-forming method, compound, and production method of compound
US10073349B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 19, 2016 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Aug 19, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F220/382
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.