Patent · US Active

EUV lithography system and operating method

US10073361B2 · kind B2 · utility

4Cited by

1References

15Claims

0Family size

Assignees

Carl Zeiss SMT GmbH · DE
ASML NETHERLANDS B.V. · NL

Inventors

Dirk Heinrich Ehm · Beckingen, DE
Stefan Schmidt · Aalen, DE
Edgar Osorio · Veldhoven, NL
Edwin Te Sligte · Eindhoven, NL
Mark Zellenrath · Veldhoven, NL
Hella Logtenberg · Eindhoven, NL

Key dates

Filing date	Apr 10, 2017
Grant date	Sep 11, 2018
Priority date	—
Expiry date	Apr 10, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70925
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An EUV lithography system (1) includes: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) additionally feeds an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) that sets an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.