Method of initializing and programing 3D non-volatile memory device
US10074435B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 8, 2018 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Mar 8, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of initializing and programming a 3D non-volatile memory device includes applying a first program voltage to a selected string selection line coupled to a selected memory layer among the plurality of memory layers; verifying whether threshold voltages of a plurality of string selection transistors reach a target value to determine the plurality of string selection transistors as programmed string selection transistors or unprogrammed string selection transistors; programming memory cell transistors of one or more of memory strings coupled with the programmed string selection transistors to have a predetermined threshold voltage, by applying a second program voltage to a selected wordline among the plurality of wordlines; and program-inhibiting channel lines of the programmed string selection transistors using the programmed memory cell transistors as screening transistors and applying a third program voltage to the selected string selection line to selectively program the unprogrammed string selection transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.