Do Bin Kim
7Patents
2h-index
6Co-inventors
36Inventor score
Filing activity: Nov 2, 2016 → Mar 14, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9685235B2 | Method of initializing 3D non-volatile memory device | Physics | 11 | Active |
| US9754673B2 | Method of initializing and driving 3D non-volatile memory device using time varying erase signal | Physics | 7 | Active |
| US10074435B2 | Method of initializing and programing 3D non-volatile memory device | Physics | 1 | Active |
| US9947413B2 | Method of initializing and programming 3D non-volatile memory device | Physics | 0 | Active |
| US11289170B2 | Nonvolatile memory device with capability of determing degradation of data erase characteristics | Electricity | 0 | Active |
| US11688478B2 | Nonvolatile memory device with capability of determining degradation of data erase characteristics | Electricity | 0 | Active |
| US10825530B2 | Method of erasing data in nonvolatile memory device by changing level of voltage and duration of time to apply the voltage for target erase block | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.