Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages

US10074732B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Xinyuan Dou · Clifton Park, US
• Hui Zang · Guilderland, US
• Hong Yu · Rexford, US
• Yanzhen Wang · Shanghai, CN

Key dates

• Filing date: Jun 14, 2017
• Grant date: Sep 11, 2018
• Expiry date: Jun 14, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

One illustrative method disclosed herein includes, among other things, forming first and second fins for a short channel FinFET device (“SCD”) and a long channel FinFET device (“LCD”), performing an oxidation process to form a sacrificial oxide material selectively on the channel portion of one of the first and second fins but not on the channel portion of the other of the first and second fins, removing the sacrificial oxide material from the fin on which it is formed so as to produce a reduced-size channel portion on that fin that is less than the initial size of the channel portion of the other non-oxidized fin, and forming first and second gate structures for the SCD and LCD devices.