Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region

US10074741B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Aichinger · Faak am See, AT
• Romain Esteve · Munich, DE
• Dethard Peters · Edenkoben, DE
• Roland Rupp · Achern, DE
• Ralf Siemieniec · Villach, AT

Key dates

• Filing date: Mar 1, 2016
• Grant date: Sep 11, 2018
• Expiry date: Apr 23, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor device includes trench structures that extend from a first surface into a semiconductor body. The trench structures include a gate structure and a contact structure that extends through the gate structure, respectively. Transistor mesas are between the trench structures. Each transistor mesa includes a body zone forming a first pn junction with a drift structure and a second pn junction with a source zone. Diode regions directly adjoin one of the contact structures form a third pn junction with the drift structure, respectively.