Inventor · Faak am See, AT

Thomas Aichinger

33Patents
6h-index
38Co-inventors
65Inventor score

Filing activity: Dec 11, 2014 → Sep 6, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9577073B2 Method of forming a silicon-carbide device with a shielded gate Electricity 17 Active
US10211306B2 Semiconductor device with diode region and trench gate structure Electricity 14 Active
US10304953B2 Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas Electricity 14 Active
US10074741B2 Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region Electricity 7 Active
US10586845B1 SiC trench transistor device and methods of manufacturing thereof Electricity 7 Active
US10714609B2 Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas Electricity 6 Active
US9960243B2 Semiconductor device with stripe-shaped trench gate structures and gate connector structure Electricity 3 Active
US9923066B2 Wide bandgap semiconductor device Electricity 3 Active
US10217636B2 Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions Electricity 2 Active
US9960230B2 Silicon-carbide transistor device with a shielded gate Electricity 1 Active
US9530850B2 Semiconductor device with stripe-shaped trench gate structures and gate connector structure Electricity 1 Active
US11342433B2 Silicon carbide devices, semiconductor devices and methods for forming silicon carbide devices and semiconductor devices Electricity 0 Active
US11626477B2 Silicon carbide field-effect transistor including shielding areas Electricity 0 Active
US11881512B2 Method of manufacturing semiconductor device with silicon carbide body Electricity 0 Active
US12341012B2 Method for annealing a gate insulation layer on a wide band gap semiconductor substrate Electricity 0 Active
US10896952B2 SiC device and methods of manufacturing thereof Electricity 0 Active
US9543414B2 Method of forming a silicon-carbide device with a shielded gate General 0 Revoked
US10700182B2 Semiconductor device with transistor cells and a drift structure and method of manufacturing Electricity 0 Active
US10393697B2 Apparatus for analyzing ion kinetics in dielectrics Physics 0 Active
US11195921B2 Semiconductor device with silicon carbide body Electricity 0 Active
US11462611B2 SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof Electricity 0 Active
US11417747B2 Transistor device with a varying gate runner resistivity per area Electricity 0 Active
US12294018B2 Vertical power semiconductor device including silicon carbide (sic) semiconductor body Electricity 0 Active
US9923053B2 Silicon-carbide transistor device with a shielded gate General 0 Revoked
US9934972B2 Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.