System and method for programming split-gate, non-volatile memory cells
US10079061B2 · kind B2 · utility
1Cited by
7References
8Claims
0Family size
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Key dates
| Filing date | Mar 30, 2016 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Mar 30, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The disclosed embodiments comprise a flash memory device and a method of programming the device in a way that reduces degradation of the device compared to prior art methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.