Viktor Markov
13Patents
3h-index
12Co-inventors
53Inventor score
Filing activity: Nov 13, 2009 → Jul 6, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7868375B2 | Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing | Electricity | 138 | Active |
| US7927994B1 | Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing | Electricity | 46 | Active |
| US8488388B2 | Method of programming a split gate non-volatile floating gate memory cell having a separate erase gate | Electricity | 4 | Active |
| US10838652B2 | Programming of memory cell having gate capacitively coupled to floating gate | Physics | 2 | Active |
| US8576648B2 | Method of testing data retention of a non-volatile memory cell having a floating gate | Physics | 2 | Active |
| US10079061B2 | System and method for programming split-gate, non-volatile memory cells | Physics | 1 | Active |
| US11017866B2 | Method of improving read current stability in analog non-volatile memory using final bake in predetermined program state | Electricity | 0 | Active |
| US12014793B2 | Method of screening non-volatile memory cells | Physics | 0 | Active |
| US10991433B2 | Method of improving read current stability in analog non-volatile memory by limiting time gap between erase and program | Electricity | 0 | Active |
| US11205490B2 | Method of improving read current stability in analog non-volatile memory cells by screening memory cells | Electricity | 0 | Active |
| US11769558B2 | Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells | Physics | 0 | Active |
| US11309042B2 | Method of improving read current stability in analog non-volatile memory by program adjustment for memory cells exhibiting random telegraph noise | Physics | 0 | Active |
| US12080355B2 | Method of improving read current stability in analog non-volatile memory by post-program tuning for memory cells exhibiting random telegraph noise | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.