IC structure with interface liner and methods of forming same
US10079208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2016 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Jul 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure may provide a method of forming an integrated circuit (IC) structure, the method including: providing a structure with: a conductive region, and an inter-level dielectric (ILD) material positioned on the conductive region, wherein the ILD material includes a contact opening to the conductive region; forming a doped metal layer within the contact opening such that the doped metal layer overlies the conductive region, wherein the doped metal layer includes a first metal doped with a second metal; and forming a contact to the conductive region within the contact opening of the ILD material by annealing the doped metal layer such that the second metal diffuses into the ILD material to form an interface liner directly between the annealed doped metal layer and the ILD material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.