Moosung Chae
23Patents
4h-index
29Co-inventors
59Inventor score
Filing activity: Nov 3, 2006 → Jul 1, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9159610B2 | Hybrid manganese and manganese nitride barriers for back-end-of-line metallization and methods for fabricating the same | Electricity | 22 | Active |
| US9330974B2 | Through level vias and methods of formation thereof | Electricity | 14 | Active |
| US7619310B2 | Semiconductor interconnect and method of making same | Electricity | 6 | Active |
| US9362228B2 | Electro-migration enhancing method for self-forming barrier process in copper metalization | Electricity | 6 | Active |
| US8932934B2 | Methods of self-forming barrier integration with pore stuffed ULK material | Electricity | 4 | Active |
| US9905460B2 | Methods of self-forming barrier formation in metal interconnection applications | Electricity | 1 | Active |
| US9054052B2 | Methods for integration of pore stuffing material | Electricity | 1 | Active |
| US10784195B2 | Electrical fuse formation during a multiple patterning process | Electricity | 1 | Active |
| US9194036B2 | Plasma vapor deposition | Electricity | 1 | Active |
| US8618635B2 | Capacitors in integrated circuits and methods of fabrication thereof | Electricity | 1 | Active |
| US10008560B2 | Capacitors in integrated circuits and methods of fabrication thereof | Electricity | 0 | Active |
| US9666524B2 | Electro-migration enhancing method for self-forming barrier process in copper mettalization | Electricity | 0 | Active |
| US8432041B2 | Semiconductor devices and methods of manufacture thereof | Electricity | 0 | Active |
| US8636879B2 | Electro chemical deposition systems and methods of manufacturing using the same | Electricity | 0 | Active |
| US10079208B2 | IC structure with interface liner and methods of forming same | Electricity | 0 | Active |
| US10553478B2 | IC structure with interface liner and methods of forming same | Electricity | 0 | Active |
| US10043753B2 | Airgaps to isolate metallization features | Electricity | 0 | Active |
| US7713866B2 | Semiconductor devices and methods of manufacture thereof | Electricity | 0 | Active |
| US11348870B2 | Electrical fuse formation during a multiple patterning process | Electricity | 0 | Active |
| US9484297B2 | Semiconductor device having non-magnetic single core inductor and method of producing the same | Electricity | 0 | Active |
| US9425140B2 | Capacitors in integrated circuits and methods of fabrication thereof | Electricity | 0 | Active |
| US9484252B2 | Integrated circuits including selectively deposited metal capping layers on copper lines and methods for fabricating the same | Electricity | 0 | Active |
| US8197660B2 | Electro chemical deposition systems and methods of manufacturing using the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.