Semiconductor device having a gap defined therein

US10079293B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Jeffrey Junhao Xu · San Diego, US
• Kern Rim · Yorktown Heights, US
• John Jianhong Zhu · San Diego, US
• Stanley Seungchul Song · San Diego, US
• Mustafa Badaroglu · Kessel-Lo, BE
• Vladimir Machkaoutsan · Leuven, BE
• Da Yang · San Diego, US
• Choh Fei Yeap · San Diego, US

Key dates

• Filing date: Dec 12, 2017
• Grant date: Sep 18, 2018
• Expiry date: Dec 12, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/679

Abstract

A method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap.