Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures

US10083835B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Anton Mauder · Kolbermoor, DE
• Roland Rupp · Achern, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Werner Schustereder · Villach, AT

Key dates

• Filing date: Jun 27, 2017
• Grant date: Sep 25, 2018
• Expiry date: Jun 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By directing an ion beam with a beam divergence θ on a process surface of a semiconductor substrate, parallel electrode trenches are formed in the semiconductor substrate. A center axis of the directed ion beam is tilted to a normal to the process surface at a tilt angle α, wherein at least one of the tilt angle α and the beam divergence θ is not equal to zero. The semiconductor substrate is moved along a direction parallel to the process surface during formation of the electrode trenches. A conductive electrode is formed in the electrode trenches, wherein first sidewalls of the electrode trenches are tilted to the normal by a first slope angle φ1 with φ1 =(α+θ/2) and second sidewalls are tilted to the normal by a second slope angle φ2 with φ2 =(α−θ/2).