Deep trench metal-insulator-metal capacitors
US10083958B2 · kind B2 · utility
1Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2016 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Dec 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6672
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Device structures for a metal-insulator-metal (MIM) capacitor, as well as methods of fabricating a device structure for a MIM capacitor. An active device level is formed on a substrate, a local interconnect level is formed on the active device level, and a metal-insulator-metal capacitor is formed in a via opening with a sidewall extending through the local interconnect level and the active device level to a given depth in the substrate. The metal-insulator-metal capacitor includes a first plate on the sidewall, a second plate, and an interplate dielectric between the first plate and the second plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.