Switch device and storage unit having a switch layer between first and second electrodes
US10084017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2015 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Jan 7, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switch device includes: a first electrode; a second electrode disposed to oppose the first electrode; a switch layer provided between the first electrode and the second electrode, and including at least one or more kinds of chalcogen elements and one or more kinds of first elements out of the one or more kinds of chalcogen elements, the one or more kinds of first elements, and a second element including one or both of oxygen (O) and nitrogen (N), the one or more kinds of chalcogen elements being selected from tellurium (Te), selenium (Se), and sulfur (S), and the one or more kinds of first elements being selected from boron (B), carbon (C), and silicon (Si).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.