Hiroaki Sei
22Patents
3h-index
11Co-inventors
52Inventor score
Filing activity: Jan 12, 2011 → Aug 8, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9543512B2 | Switch device and storage unit | Electricity | 13 | Active |
| US10084017B2 | Switch device and storage unit having a switch layer between first and second electrodes | Physics | 8 | Active |
| US9466791B2 | Storage device and storage unit | Electricity | 4 | Active |
| US10529777B2 | Switch device and storage unit | Physics | 2 | Active |
| US10403680B2 | Switch device and storage unit | Electricity | 2 | Active |
| US10804321B2 | Switch device and storage unit | Electricity | 1 | Active |
| US10418416B2 | Memory device and memory unit | Electricity | 1 | Active |
| US11152428B2 | Selection device and storage apparatus | Electricity | 1 | Active |
| US11462685B2 | Switch device, storage apparatus, and memory system incorporating boron and carbon | Electricity | 1 | Active |
| US8710482B2 | Memory component and memory device | Physics | 1 | Active |
| US9761796B2 | Storage device and storage unit with ion source layer and resistance change layer | Electricity | 1 | Active |
| US9112149B2 | Memory element and method of manufacturing the same, and memory device | Electricity | 0 | Active |
| US11183633B2 | Switch device, storage apparatus, and memory system | Physics | 0 | Active |
| US11522132B2 | Storage device and storage unit with a chalcogen element | Physics | 0 | Active |
| US10879312B2 | Memory device and memory unit | Electricity | 0 | Active |
| US11004902B2 | Circuit element, storage device, electronic equipment, method of writing information into circuit element, and method of reading information from circuit element | Physics | 0 | Active |
| US8674335B2 | Memory component and memory device | General | 0 | Revoked |
| US9263670B2 | Memory element and memory device | Physics | 0 | Active |
| US9202560B2 | Memory element and memory device with ion source layer and resistance change layer | Physics | 0 | Active |
| US9246090B2 | Storage device and storage unit | Electricity | 0 | Active |
| US8546782B2 | Memory element and memory device | Physics | 0 | Active |
| US8847194B2 | Memory component including an ion source layer and a resistance change layer, and a memory device using the same | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.