Low resistance conductive contacts
US10084093B1 · kind B1 · utility
5Cited by
12References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2017 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | May 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
During formation of a trench silicide contact, a sacrificial layer is incorporated into the trench directly over source/drain junctions prior to metallization of the trench. Selective removal of the sacrificial layer widens the trench proximate to the source/drain junctions, increasing the contact area and correspondingly decreasing the contact resistance between the source/drain junctions and a silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.