Wrapped source/drain contacts with enhanced area
US10084094B1 · kind B1 · utility
14Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2017 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Mar 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device and methods of forming the same include forming a first dielectric layer over a semiconductor fin. A second dielectric layer is formed around the first dielectric layer. The semiconductor fin is recessed below a height of the first and second dielectric layers. Source and drain extensions are grown from the recessed semiconductor fin. The first dielectric layer is recessed to expose an underside of and sidewalls of the source/drain extensions. Conductive contacts are formed around exposed portions of the source/drain extensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.