Graded-index structure for optical systems

US10084101B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thoralf Kautzsch · Dresden, DE
• Heiko Froehlich · Radebeul, DE
• Maik Stegemann · Freital, DE
• Mirko Vogt · Dresden, DE

Key dates

• Filing date: Nov 7, 2016
• Grant date: Sep 25, 2018
• Expiry date: Dec 30, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/95

Abstract

An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. The encapsulation layer includes at least one subwavelength-based graded index structure provided over the peripheral region of the substrate, and the subwavelength-based graded index structure is configured to redirect the light from a region over the peripheral region onto the optical sensor.