High planarization efficiency chemical mechanical polishing pads and methods of making
US10086494B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 13, 2016 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Oct 7, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24D11/00
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.