Implantation using solid aluminum iodide (AlI3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products
US10087520B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Jun 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.