Deposition of metal borides
US10087522B2 · kind B2 · utility
447Cited by
727References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2016 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Nov 9, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45525
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.