Crack-stop structure for an IC product and methods of making such a crack-stop structure
US10090258B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Sep 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/564
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative crack-stop structure disclosed herein may include a first crack-stop metallization layer comprising a first metal line layer that has a plurality of openings formed therein and a second crack-stop metallization layer positioned above and adjacent the first crack-stop metallization layer, wherein the second crack-stop metallization layer has a second metal line layer and a via layer, and wherein the via layer comprises a plurality of vias having a portion that extends at least partially into the openings in the first metal line layer of the first crack-stop metallization layer so as to thereby form a stepped, non-planar interface between the first metal line layer of the first crack-stop metallization layer and the via layer of the second crack-stop metallization layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.