Deep high capacity capacitor for bulk substrates
US10090287B1 · kind B1 · utility
4Cited by
9References
10Claims
0Family size
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Key dates
| Filing date | Nov 15, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Nov 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A deep trench capacitor having a high capacity is formed into a deep trench having faceted sidewall surfaces. The deep trench is located in a bulk silicon substrate that contains an upper region of undoped silicon and a lower region of n-doped silicon. The lower region of the bulk silicon substrate includes alternating regions of n-doped silicon that have a first boron concentration (i.e., boron deficient regions), and regions of n-doped silicon that have a second boron concentration which is greater than the first boron concentration (i.e., boron rich regions).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.