Semiconductor device and method for manufacturing the same
US10090320B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2016 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Nov 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment, includes a stacked body, a plurality of first terraces, a second terrace, a plurality of interconnects, a plurality of conductive bodies. The stacked body includes a plurality of electrode layers. The stacked body includes a stairstep portion at an end portion of the stacked body. The plurality of first terraces are provided in the stairstep portion. The second terrace is provided in the stairstep portion. The plurality of interconnects are provided from the second terrace to the plurality of first terraces. The plurality of interconnects contact one of the plurality of electrode layers at the stairstep portion. The plurality of conductive bodies are provided above the second terrace. The plurality of conductive bodies extend in a stacking direction of the stacked body. The conductive bodies contact the interconnects above the second terrace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.