Semiconductor device having gaps within the conductive parts
US10090351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | May 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1431
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment includes a low-adhesion film, a pair of substrates, and a metal electrode. The low-adhesion film has lower adhesion to metal than a semiconductor oxide film. The pair of substrates is provided with the low-adhesion film interposed therebetween. The metal electrode passes through the low-adhesion film and connects the pair of substrates, and includes, between the pair of substrates, a part thinner than parts embedded in the pair of substrates. A portion of the metal electrode embedded in one substrate is provided with a gap interposed between the portion and the low-adhesion film on the other substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.