Efficient metal-insulator-metal capacitor
US10090378B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Mar 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
Capacitors and methods of forming the same include forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate. The second block copolymer material is etched away. Material from the substrate is etched based on a pattern defined by the first block copolymer material to form cavities in the substrate. A capacitor stack is conformally deposited over the substrate, such that the capacitor stack is formed on horizontal surfaces of the substrate and vertical surfaces of the cavities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.