Semiconductor device having localized charge balance structure and method
US10090380B2 · kind B2 · utility
0Cited by
19References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2016 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | May 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor substrate is provided having a localized superjunction structure extending from a major surface. A doped region is then formed adjacent the localized superjunction structure to create a charge imbalance therein. In one embodiment, the doped region can be an ion implanted region formed within the localized superjunction structure. In another embodiment, the doped region can be an epitaxial layer having a graded dopant profile adjoining the localized superjunction structure. The charge imbalance can improve, among other things, unclamped inductive switching (UIS) performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.