Inventor · Zottegem, BE

Peter Moens

64Patents
5h-index
46Co-inventors
68Inventor score

Filing activity: Jan 7, 2005 → Jun 23, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7709889B2 Semiconductor device with improved breakdown properties and manufacturing method thereof Electricity 15 Active
US9673311B1 Electronic device including a multiple channel HEMT Electricity 13 Active
US7723800B2 Deep trench isolation for power semiconductors Electricity 13 Active
US9741840B1 Electronic device including a multiple channel HEMT and an insulated gate electrode Electricity 10 Active
US7804670B2 Hybrid ESD clamp Electricity 6 Active
US8115273B2 Deep trench isolation structures in integrated semiconductor devices Electricity 5 Active
US10797168B1 Electronic device including a high electron mobility transistor that includes a barrier layer having different portions Electricity 5 Active
US7667270B2 Double trench for isolation of semiconductor devices Electricity 5 Active
US9343528B2 Process of forming an electronic device having a termination region including an insulating region Electricity 4 Active
US9728629B1 Electronic device including a polycrystalline compound semiconductor layer and a process of forming the same Electricity 4 Active
US9070705B2 HEMT semiconductor device and a process of forming the same Electricity 4 Active
US10644127B2 Process of forming an electronic device including a transistor structure Electricity 4 Active
US9219138B2 Semiconductor device having localized charge balance structure and method Electricity 4 Active
US7608510B2 Alignment of trench for MOS Electricity 4 Active
US7915155B2 Double trench for isolation of semiconductor devices Electricity 4 Active
US10269947B1 Electronic device including a transistor including III-V materials and a process of forming the same Electricity 4 Active
US9842923B2 Ohmic contact structure for semiconductor device and method Electricity 3 Active
US9287371B2 Semiconductor device having localized charge balance structure and method Electricity 3 Active
US10818787B1 Electronic device including a high electron mobility transistor including a gate electrode and a dielectric film Electricity 3 Active
US9245736B2 Process of forming a semiconductor wafer Electricity 3 Active
US10680094B2 Electronic device including a high electron mobility transistor including a gate electrode Electricity 3 Active
US7989886B2 Alignment of trench for MOS Electricity 2 Active
US9324784B2 Electronic device having a termination region including an insulating region Electricity 2 Active
US9269789B2 Method of forming a high electron mobility semiconductor device and structure therefor Electricity 2 Active
US9960265B1 III-V semiconductor device and method therefor Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.