Integrated circuit structure including single diffusion break and end isolation region, and methods of forming same
US10090382B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Nov 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to forming single diffusion break (SDB) and end isolation regions in an integrated circuit (IC) structure, and resulting structures. An IC structure according to the disclosure includes: a plurality of fins positioned on a substrate; a plurality of gate structures each positioned on the plurality of fins and extending transversely across the plurality of fins; an insulator region positioned on and extending transversely across the plurality of fins between a pair of the plurality of gate structures; at least one single diffusion break (SDB) region positioned within the insulator region and one of the plurality of fins, the at least one SDB extending from an upper surface of the substrate to an upper surface of the insulator region; and an end isolation region positioned laterally adjacent to a lateral end of one of the plurality of gate structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.