Magnetoresistive element
US10090459B2 · kind B2 · utility
7Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Jan 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element includes a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous W.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.