Method for separating at least two substrates along a selected interface
US10093086B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 2, 2016 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Sep 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for separating at least two substrates comprising at least two separation interfaces along one of the interfaces includes, before inserting a blade between the substrate, damaging at least one portion of a peripheral region of a chosen one of the interfaces, then inserting the blade and partially parting the substrates, and applying a fluid in a space between the parted substrates while the blade remains inserted therebetween, and decreasing a rupture energy of the chosen interface by stress corrosion involving breaking of siloxane bonds present at the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.