Methods and apparatus for chemical vapor deposition of a cobalt layer
US10094023B2 · kind B2 · utility
1Cited by
9References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 31, 2015 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Jul 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate; (c) rotating the substrate having the deposited cobalt layer to a second processing position; and (d) treating the substrate at the second processing position to remove contaminants from the cobalt layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.