Inventor · Saratoga, CA, US

Mei Chang

43Patents
6h-index
99Co-inventors
68Inventor score

Filing activity: Jan 11, 2011 → Jul 20, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US10121671B2 Methods of depositing metal films using metal oxyhalide precursors Electricity 407 Active
US10400335B2 Dual-direction chemical delivery system for ALD/CVD chambers Emerging Cross-Sectional Technologies 345 Active
US9460959B1 Methods for pre-cleaning conductive interconnect structures Mechanical Engineering; Lighting; Heating 113 Active
US9048183B2 NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors Electricity 11 Active
US9601339B2 Methods for depositing fluorine/carbon-free conformal tungsten Electricity 9 Active
US9399812B2 Methods of preventing plasma induced damage during substrate processing Electricity 8 Active
US8642468B2 NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors Electricity 6 Active
US9418890B2 Method for tuning a deposition rate during an atomic layer deposition process Chemistry; Metallurgy 5 Active
US10109534B2 Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD) Electricity 4 Active
US9177780B2 Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition Electricity 3 Active
US10600685B2 Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film Electricity 2 Active
US9245769B2 Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition Electricity 2 Active
US9595466B2 Methods for etching via atomic layer deposition (ALD) cycles Electricity 2 Active
US10395916B2 In-situ pre-clean for selectivity improvement for selective deposition Electricity 2 Active
US10763090B2 High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process Electricity 1 Active
US10094023B2 Methods and apparatus for chemical vapor deposition of a cobalt layer Electricity 1 Active
US9947578B2 Methods for forming low-resistance contacts through integrated process flow systems Electricity 1 Active
US9824889B2 CVD silicon monolayer formation method and gate oxide ALD formation on III-V materials Electricity 1 Active
US9653318B2 Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition Electricity 1 Active
US9202745B2 Directional SiO2 etch using low-temperature etchant deposition and plasma post-treatment Electricity 1 Active
US10985023B2 Methods for depositing fluorine/carbon-free conformal tungsten Electricity 0 Active
US9147578B2 Contact clean by remote plasma and repair of silicide surface Emerging Cross-Sectional Technologies 0 Active
US11033930B2 Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition Performing Operations; Transporting 0 Active
US10373824B2 CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materials Electricity 0 Active
US9857027B2 Apparatus and method for self-regulating fluid chemical delivery Emerging Cross-Sectional Technologies 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.