Semiconductor device, manufacturing method for semiconductor device, and ferroelectric layer
US10096619B2 · kind B2 · utility
12Cited by
1References
8Claims
0Family size
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Key dates
| Filing date | Sep 6, 2016 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Sep 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a ferroelectric layer including hafnium oxide provided between the first conductive layer and the second conductive layer, a sum of hafnium (Hf) and oxygen (O) in the hafnium oxide being 98 atomic percent or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.