Methods for forming a semiconductor device and a semiconductor device

US10096677B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Moriz Jelinek · Villach, AT
• Naveen Goud Ganagona · Fishkill, US
• Johannes Georg Laven · Taufkirchen, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Werner Schustereder · Villach, AT

Key dates

• Filing date: Jun 9, 2016
• Grant date: Oct 9, 2018
• Expiry date: Jul 21, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/53
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a semiconductor device includes implanting a predefined dose of protons into a semiconductor substrate. Further, the method comprises controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the predefined dose of protons. The target temperature range reaches from a lower target temperature limit to an upper target temperature limit. Further, the lower target temperature limit is equal to a target temperature minus 30° C. and the upper target temperature limit is equal to the target temperature plus 30° C. and the target temperature is higher than 80° C.