Magnetic shielding for MTJ device or bit
US10096768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2016 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | May 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16152
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Emerging memory chips and methods for forming an emerging memory chip are presented. For example, magnetic random access memory (MRAM) chip magnetic shielding at the device-level is disclosed. The MRAM chip includes a magnetic shield structure that is substantially surrounding a magnetic tunnel junction (MTJ) bit or device of a MTJ array. The magnetic shield may be configured in the form of a cylindrical shield structure or magnetic shield spacer that substantially surrounds the MTJ bit or device. The magnetic shield structure in the form of cylindrical shield structure or magnetic shield spacer may include top and/or bottom plate shield. The magnetic shield structure in various forms and configurations protect the MTJ stack from external or local magnetic fields. This magnetic shielding structure is applicable for both in-plane and perpendicular MRAM chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.