Inventor · Singapore, SG

Yi Jiang

41Patents
7h-index
32Co-inventors
65Inventor score

Filing activity: Dec 30, 2008 → Mar 18, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9865649B2 Integrated two-terminal device and logic device with compact interconnects having shallow via for embedded application Electricity 24 Active
US10290679B1 High-Density STT-MRAM with 3D arrays of MTJs in multiple levels of interconnects and method for producing the same Electricity 18 Active
US10580968B1 Integrated circuit with memory cells having reliable interconnection Electricity 15 Active
US10121964B2 Integrated magnetic random access memory with logic device Electricity 13 Active
US10199572B2 Integrated magnetic random access memory with logic device Electricity 11 Active
US9397139B1 Integrated inductor and magnetic random access memory device Electricity 8 Active
US10096768B2 Magnetic shielding for MTJ device or bit Electricity 7 Active
US9349772B2 Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAM Electricity 6 Active
US9972775B2 Integrated magnetic random access memory with logic device having low-k interconnects Electricity 6 Active
USD741869S1 Mounting arm for flat panel display General 5 Active
US10461247B2 Integrated magnetic random access memory with logic device having low-K interconnects Electricity 4 Active
US9553129B2 Magnetic tunnel junction stack alignment scheme Electricity 4 Active
US10483461B2 Embedded MRAM in interconnects and method for producing the same Electricity 3 Active
USD741870S1 Mounting arm for flat panel display General 2 Active
US10693054B2 MTJ bottom metal via in a memory cell and method for producing the same Electricity 2 Active
US10651380B1 Memory devices and methods of forming the same Electricity 2 Active
US8502766B2 Flat display panel and active device array substrate and light-on testing method thereof Physics 2 Active
US9343662B2 Magnetic memory device and method of forming thereof Electricity 2 Active
US11978510B2 Memory devices and methods of forming the same Physics 1 Active
US10593728B1 Integrated circuits and methods for fabricating integrated circuits with magnetic tunnel junction (MTJ) structures Electricity 1 Active
US9806128B2 Interposers for integrated circuits with multiple-time programming and methods for manufacturing the same Electricity 1 Active
US10475990B2 Pillar contact extension and method for producing the same Electricity 1 Active
US10381403B1 MRAM device with improved seal ring and method for producing the same Electricity 1 Active
US10262868B1 Self-aligned planarization of low-K dielectrics and method for producing the same Electricity 1 Active
US9564575B2 Dual encapsulation integration scheme for fabricating integrated circuits with magnetic random access memory structures Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.