Bottom electrode for MRAM applications

US10096769B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Prasad Bhosale · Slingerlands, US
• Raghuveer R. Patlolla · Guilderland, US
• Michael Rizzolo · Delmar, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Mar 10, 2017
• Grant date: Oct 9, 2018
• Expiry date: Mar 10, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10

Abstract

A substantially flat bottom electrode for magnetoresistive random access memory (MRAM) devices includes three components: a recessed bulk conductive material such as copper, a conductive liner lining the recess, and a cap layer, wherein the conductive liner is a harder material than the cap layer. The cap layer and the dielectric layer are coplanar having a height differential of less than 3 nanometers. The conductive liner has a lower chemical mechanical planarization removal rate. Also provided are processes for forming the bottom electrode.