Methods for wet metal seed deposition for bottom up gapfill of features
US10103056B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2017 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Mar 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a metal seed for performing bottom-up gapfill of features of a substrate includes providing a substrate including a plurality of features; flowing a dilute metal precursor solution into the features, wherein the dilute metal precursor solution includes a metal precursor and a dilution liquid; evaporating the dilution liquid to locate the metal precursor at bottoms of the plurality of features; exposing the substrate to a plasma treatment to reduce the metal precursor to at least one of a metal or a metal alloy and to form a seed layer; performing a heat treatment on the substrate; and using a selective gapfill process to fill the features with a transition metal in contact with the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.