Patent · US Active

Semiconductor devices and processing methods

US10103123B2 · kind B2 · utility

2Cited by

1References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Rogalli · Rottenburg am Neckar, DE
Wolfgang Lehnert · Lintach, DE

Key dates

Filing date	Mar 10, 2017
Grant date	Oct 16, 2018
Priority date	—
Expiry date	Mar 10, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1815
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.