Transfer chamber metrology for improved device yield
US10103288B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2015 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Jun 7, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.