Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US10106568B2 · kind B2 · utility
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17References
15Claims
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Key dates
| Filing date | Oct 28, 2016 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Oct 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are Hafnium-containing film forming compositions comprising Silicon- and Hafnium-containing precursors having one of the following formula: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing thin films on substrates via vapor deposition processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.