Identification of a condition of a sector of memory cells in a non-volatile memory
US10109329B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Mar 28, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory of a complementary type includes sectors of memory cells, with each cell formed by a direct memory cell and a complementary memory cell. Each sector is in a non-written condition when the corresponding memory cells are in equal states and is in a written condition wherein each location thereof stores a first logic value or a second logic value when the memory cells of the location are in a first combination of different states or in a second combination of different states, respectively. A sector is selected and a determination is made as to a number of memory cells in the programmed state and a number of memory cells in the erased state. From this information, the condition of the selected sector is identified from a comparison between the number of memory cells in the programmed state and the number of memory cells in the erased state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.