Inventor · Milano, IT

Fabio De Santis

19Patents
4h-index
10Co-inventors
57Inventor score

Filing activity: Nov 20, 2001 → Feb 14, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6535019B2 Switching control method of a level shifter and corresponding improved self-controlled level shifter Electricity 13 Expired
US9634562B1 Voltage doubling circuit and charge pump applications for the voltage doubling circuit Electricity 9 Active
US8693256B2 FTP memory device with single selection transistor Physics 9 Active
US6894934B2 Non-volatile memory cell sensing circuit, particularly for low power supply voltages and high capacitive load values Physics 6 Expired
US9159425B2 Non-volatile memory with reduced sub-threshold leakage during program and erase operations Physics 4 Active
US11424676B2 Positive and negative charge pump control Electricity 2 Active
US9443566B2 Identification of a condition of a sector of memory cells in a non-volatile memory Physics 2 Active
US9640230B2 Identification of an operational condition of a sector of memory cells in a non-volatile memory Physics 1 Active
US10862392B2 Charge pump circuit with improved discharge and corresponding discharge method Electricity 1 Active
US9627066B1 Non volatile memory cell and memory array Physics 1 Active
US10658364B2 Method for converting a floating gate non-volatile memory cell to a read-only memory cell and circuit structure thereof Electricity 1 Active
US9442149B2 Measuring leakage currents and measuring circuit for carrying out such measuring Physics 0 Active
US9025355B2 Non-volatile memory device with clustered memory cells Physics 0 Active
US9755632B2 Cascode voltage generating circuit and method Electricity 0 Active
US11665915B2 Method for converting a floating gate non-volatile memory cell to a read-only memory cell and circuit structure thereof Electricity 0 Active
US11611275B2 Positive and negative charge pump control Electricity 0 Active
US11863066B2 Positive and negative charge pump control Electricity 0 Active
US9691493B1 Device for generating a voltage reference comprising a non-volatile memory cell Electricity 0 Active
US10109329B2 Identification of a condition of a sector of memory cells in a non-volatile memory Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.