Magnetic memory device and method for operating the same
US10109367B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 11, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Jul 11, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device is provided. The magnetic memory device includes a memory circuit comprising a first tunnel magnetoresistive element and a second tunnel magnetoresistive element coupled in series. An input node of the magnetic memory device is coupled to the first tunnel magnetoresistive element, wherein the input node is configured to receive a voltage signal. The first tunnel magnetoresistive element initially holds a first resistance value, wherein the first tunnel magnetoresistive element is short-circuited to hold a second resistance value after the voltage signal is received by the input node. End nodes of the memory circuit are coupled to defined voltages in a read mode. The magnetic memory device further includes a read-out circuit configured to measure a voltage at a sensing node in the read mode. The sensing node is interconnected between the first tunnel magnetoresistive element and the second tunnel magnetoresistive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.