Aluminum-nitride buffer and active layers by physical vapor deposition
US10109481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2013 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Jul 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.