Inventor · Sunnyvale, CA, US

Mingwei Zhu

54Patents
7h-index
77Co-inventors
71Inventor score

Filing activity: Jan 5, 2009 → Nov 16, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8137736B2 Fabrication method for hollow microneedles for drug delivery Performing Operations; Transporting 37 Active
USD904640S1 Substrate carrier General 19 Active
US11094530B2 In-situ curing of color conversion layer Electricity 14 Active
US8409895B2 Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer Electricity 14 Active
US10886155B2 Optical stack deposition and on-board metrology Physics 8 Active
US10032827B2 Systems and methods for transfer of micro-devices Electricity 8 Active
US11888093B2 Display with color conversion layer and isolation walls Electricity 7 Active
US9396933B2 PVD buffer layers for LED fabrication Electricity 4 Active
US11239213B2 In-situ curing of color conversion layer in recess Electricity 3 Active
US10109481B2 Aluminum-nitride buffer and active layers by physical vapor deposition Electricity 3 Active
US11600761B2 High critical temperature metal nitride layer with oxide or oxynitride seed layer Physics 3 Active
US11404612B2 LED device having blue photoluminescent material and red/green quantum dots Electricity 2 Active
US10692923B2 Systems and methods for transfer of micro-devices Electricity 2 Active
US11130256B2 Strong and tough structural wood materials, and methods for fabricating and use thereof Textiles; Paper 2 Active
US9478697B2 Reusable substrate carrier Electricity 2 Active
US11342481B2 Preclean and encapsulation of microLED features Electricity 2 Active
US9845533B2 Substrate carrier system utilizing electrostatic chucking to accommodate substrate size heterogeneity Chemistry; Metallurgy 2 Active
US11554514B2 Strong and tough structural wood materials, and methods for fabricating and use thereof Textiles; Paper 1 Active
US11081623B2 Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices Emerging Cross-Sectional Technologies 1 Active
US11788883B2 SNSPD with integrated aluminum nitride seed or waveguide layer Electricity 1 Active
US10546973B2 Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices Emerging Cross-Sectional Technologies 1 Active
US11653576B2 SNSPD with integrated aluminum nitride seed or waveguide layer Electricity 1 Active
US11251226B2 Systems and methods for transfer of micro-devices Electricity 1 Active
US12168727B2 Transparent wood composite, systems and method of fabrication Emerging Cross-Sectional Technologies 1 Active
US11678589B2 Method of making high critical temperature metal nitride layer Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.