Optical device wafer processing method
US10109527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2016 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Nov 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optical device wafer processing method includes a shield tunnel forming step of applying a pulsed laser beam having a transmission wavelength to a sapphire substrate along an area corresponding to each division line from the back side of the sapphire substrate in the condition where the focal point of the pulsed laser beam is set inside the sapphire substrate, thereby forming a plurality of shield tunnels arranged along the area corresponding to each division line, each shield tunnel being composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The optical device wafer processing method further includes a dividing step of applying an external force to the optical device wafer after performing a light emitting layer forming step, thereby dividing the optical device wafer along the division lines to obtain the individual optical device chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.